Catalyst-free growth of lateral InAs nanowires-Reference-Cited by-同舟云学术

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Catalyst-free growth of lateral InAs nanowires

Published:2018-09 Issue: Volume:498 Page:209-213
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Hailing,Wei Wenqi,Wang Jianhuan,Feng Qi,Wu Shiyao,Yang Huaixin,Xu Xiulai,Wang Ting,Zhang Jianjun

Funder

National Natural Science Foundation of China

Ministry of Science and Technology

Key Research Program of Frontier Sciences

CAS

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. High Electron Mobility InAs Nanowire Field-Effect Transistors

2. Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

3. InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices

4. Vertical high-mobility wrap-gated InAs nanowire transistor

5. Growth and photoluminescence characteristics of AlGaAs nanowires

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Molecular Beam Epitaxy (MBE) Parameters on Catalyst-Free Growth of InAs Nanowires on Silicon (111) Substrate;Journal of Electronic Materials;2019-02-12

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