Effect of gas flow rate on chemical reactions in Czochralski silicon crystal growth-Reference-Cited by-同舟云学术

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Effect of gas flow rate on chemical reactions in Czochralski silicon crystal growth

Published:2018-12 Issue: Volume:504 Page:56-61
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Li Y.,Gao M.M.,Li Jin,Gao A.,Liang S.,Li H.B.

Funder

National Natural Science Foundation of China

Key Technology R&D Program of Ningxia Hui Autonomous Region

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. The Effects of Gas‐Phase Convection on Carbon Contamination of Czochralski‐Grown Silicon

2. The effect of graphite components and crucible coating on the behaviour of carbon and oxygen in multicrystalline silicon

3. Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth

4. Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Eliminate of cracking for the growth of large-size Tb3Sc2Al3O12 crystals;Journal of Crystal Growth;2022-02

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