Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
2. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
3. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
4. Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress
5. Structural defects in α-SiC single crystals grown by the modified-Lely method
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1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03
2. The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC;Journal of Applied Physics;2024-07-25
3. Tailoring Electronic Properties of 6H‐SiC with Different Composition of Silicon by First‐Principles Calculations;Advanced Theory and Simulations;2024-04-30
4. Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules;The Journal of Physical Chemistry C;2023-07-12
5. Development of High Quality 8 Inch 4H-SiC Substrates;Solid State Phenomena;2023-06-06
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