Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference48 articles.
1. Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate
2. High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate
3. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
4. Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride
5. Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors
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1. AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection;Materials Science in Semiconductor Processing;2023-06
2. Template-free synthesis of perovskite (PEA)2PbI4 nanowires by ion-intercalation processing for single-nanowire photodetectors;Journal of Alloys and Compounds;2023-04
3. The road ahead for ultrawide bandgap solar-blind UV photodetectors;Journal of Applied Physics;2022-04-21
4. Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection;Chinese Optics Letters;2022
5. Reverse Leakage Current Transport Mechanisms in Ni/Au Al0.58Ga0.42N Schottky Type Photodetectors;IEEE Photonics Journal;2021-08
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