Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
2. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
3. Epitaxial growth and large band-gap bowing of ZnSeO alloy
4. Structure and optical properties of ZnSeO alloys with O composition up to 6.4%
5. Optical properties of ZnSe1−xOx epilayers
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2. Lattice constant and band gap of ZnOxSe1−x (0 ≤ x ≤ 0.25) acquired by the first-principles calculations;Applied Physics A;2021-12-12
3. First-principles study on the band gap energy of ZnSexO1-x in the O-rich range;Applied Physics Express;2019-07-15
4. Band gap energy of ZnOxSe1−x over the entire composition range;Applied Physics A;2018-09-20
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