Site-controlled growth of InP/GaInP islands on periodic hole patterns in GaAs substrates produced by microsphere photolithography
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates
2. Regular array of InGaAs quantum dots with 100-nm-periodicity formed on patterned GaAs substrates
3. Site-controlled InP/GaInP quantum dots emitting single photons in the red spectral range
4. Site-controlled photoluminescence at telecommunication wavelength from InAs∕InP quantum dots
5. Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface
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1. Surface potential in n- and p-GaInP2(100): temperature effect;Journal of Physics D: Applied Physics;2021-02-18
2. Synchrotron Photoemission Spectroscopy Study of p-GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions;The Journal of Physical Chemistry C;2017-04-14
3. Comparison of wet chemical treatment and Ar-ion sputtering for GaInP2(100) surface preparation;Materials Science in Semiconductor Processing;2016-08
4. Effects of growth conditions on heteroepitaxial thin films: Fast kinetic Monte Carlo simulations;Journal of Crystal Growth;2015-01
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