Grain structure of thin-film silicon by zone melting recrystallization on SiC base layer

Author:

Kunz T.,Hessmann M.T.,Auer R.,Bochmann A.,Christiansen S.,Brabec C.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. A review of thin-film crystalline silicon for solar cell applications. Part 2: foreign substrates;Catchpole;Solar Energy Materials and Solar Cells,2001

2. Thin-Film Polycrystalline Silicon Solar Cells;Beaucarne,2006

3. T. Kieliba, J. Pohl, A. Eyer, C. Schmiga, Optimization of c-Si films formed by zone-melting recrystallization for thin-film solar cells, Proceedings of the 3rd WCPEC, Osaka, 2003, p. 1170.

4. 16.0% Efficiency of large area (10×10cm2) thin film polycrystalline silicon solar cell;Morikawa;Solar Energy Materials and Solar Cells,1998

5. S. Janz, S. Reber, H. Habenicht, H. Lautenschlager, C. Schetter, Processing of c-Si thin-film solar cell on ceramic substrate with conductive SiC diffusion barrier layer, Proceedings of the 4th WCPEC, Hawaii, 2006, p. 1403.

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