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Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy

  • Published:2013-09 Issue: Volume:378 Page:532-536
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Dheeraj D.L.,Munshi A.M.,Christoffersen O.M.,Kim D.C.,Signorello G.,Riel H.,van Helvoort A.T.J.,Weman H.,Fimland B.O.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Ohmic Contacts to p-GaAs Nanowires;Nanoscale Research Letters;2019-11-14

2. Nanowire Electronics: From Nanoscale to Macroscale;Chemical Reviews;2019-07-30

3. Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure;ACS Applied Materials & Interfaces;2019-03-20

4. In Situ Heat-Induced Replacement of GaAs Nanowires by Au;Nano Letters;2016-04-28

5. Incorporation of Be dopant in GaAs core and core–shell nanowires by molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
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