Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy-Reference-Cited by-同舟云学术

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Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Published:2013-03 Issue: Volume:367 Page:88-93
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Frajtag P.,Nepal N.,Paskova T.,Bedair S.M.,El-Masry N.A.

Funder

National Science Foundation

Army Research Office

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Nonpolar and Semipolar Group III Nitride-Based Materials

2. Development and prospects of nitride materials and devices with nonpolar surfaces

3. Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity

4. Stability and Indium Incorporation Processes on In0.25Ga0.75N Surfaces under Growth Conditions: First-Principles Calculations

5. Enhancing the Light Extraction Efficiency of Blue Semipolar (10\bar1\bar1) Nitride-Based Light Emitting Diodes through Surface Patterning

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarity of GaN with polar {0001} and semipolar , , orientations by x-ray photoelectron diffraction;Journal of Materials Research;2015-06-05

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