Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates
2. MBE Growth of lattice-matched ZnCdMgSe quaternaries and ZnCdMgSe/ZnCdSe quantum wells on InP substrates
3. Wide bandgap over 3eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy
4. Direct-to-indirect band gap crossover for the BexZn1−xTe alloy
5. Proposal of a novel BeZnSeTe quaternary for II-VI middle range visible light emitting devices on InP substrates
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates;Journal of Crystal Growth;2019-04
2. Investigation of yellow/green II-VI compound semiconductor laser diode structures on InP substrates;physica status solidi (c);2016-03-16
3. Application of indium tin oxide to the p-cladding layers of yellow/green II-VI compound semiconductor laser diode structures on InP substrates;physica status solidi (c);2016-02-09
4. Investigation of p-side contact layers for II–VI compound semiconductor optical devices fabricated on InP substrates by MBE;Journal of Crystal Growth;2015-09
5. Investigation of p-contact layers for BeZnSeTe/MgZnCdSe optical devices on InP substrates;physica status solidi (c);2014-03-25
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