Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight
2. 1-eV solar cells with GaInNAs active layer
3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
4. Novel materials for high-efficiency III–V multi-junction solar cells
5. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
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1. GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy;Journal of Materials Science: Materials in Electronics;2019-12-16
2. GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal Organic Chemical Vapor Deposition with High Efficiency;Chinese Physics Letters;2016-10
3. GaInNAs/Ge (1.10/0.67 eV) double-junction solar cell grown by metalorganic chemical vapor deposition for high efficiency four-junction solar cell application;Journal of Physics D: Applied Physics;2015-10-26
4. 1.25-eV GaAsSbN/Ge Double-Junction Solar Cell Grown by Metalorganic Vapor Phase Epitaxy for High Efficiency Multijunction Solar Cell Application;IEEE Journal of Photovoltaics;2014-05
5. InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition;Solar Energy;2014-04
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