Growth improvement of AgGaSe2 single crystal using the vertical Bridgman technique with steady ampoule rotation and its characterization-Reference-Cited by-同舟云学术

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Growth improvement of AgGaSe2 single crystal using the vertical Bridgman technique with steady ampoule rotation and its characterization

Published:2012-01 Issue:1 Volume:338 Page:42-46
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Anandha Babu G.,Subramaniyan@Raja R.,Karunagaran N.,Perumal Ramasamy R.,Ramasamy P.,Ganesamoorthy S.,Gupta P.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Infrared absorption and electrical properties of AgGaSe2

2. Broadly tunable infrared parametric oscillator using AgGaSe2

3. Second harmonic generation and infrared mixing in AgGaSe2

4. Down-conversion in the 4–18 μm range with GaSe and AgGaSe2 nonlinear crystals

5. Improved growth and characterization of AgGa1−xInxSe2 crystals

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2. Raman- and Infrared-Active Phonons in Nonlinear Semiconductor AgGaGeS4;Crystals;2023-01-14

3. Inorganic nonlinear optical materials;Comprehensive Inorganic Chemistry III;2023

4. AgGaSe₂-Inspired Nonlinear Optical Materials: Tetrel Selenides of Alkali Metals and Mercury;Chemistry of Materials;2022-06-26

5. Optical and defect properties of mid-IR laser crystal Dy³⁺: PbGa₂S₄: a DFT and XPS study;CrystEngComm;2022

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