Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Chemical vapor deposition of Ge nanocrystals on SiO2;Baron;Applied Physics Letters,2003
2. Improvement of data retention in nanocrystal-based memories using InAs QDs embedded in SiO2 on silicon;Hocevar;IEEE Transactions on Electron Devices,2009
3. Formation of InAs quantum dots on a silicon (100) surface;Cirlin;Semiconductor Science and Technology,1998
4. Preparation and optical properties of InAs0.4P0.6 nanocrystal alloy embedded in SiO2 thin films;Zheng;Semiconductor Science and Technology,2001
5. Sol–gel synthesis and optical properties of size controlled indium arsenide nanocrystals embedded in silica glasses;Yang;Journal of Crystal Growth,2005
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1. Ultrafast exciton dynamics in colloidal aluminum phosphide nanocrystals;Chemical Physics Letters;2013-02
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