Defect levels and thermomigration of Te precipitates in CdZnTe:Pb-Reference-Cited by-同舟云学术

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Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

Published:2010-03 Issue:6 Volume:312 Page:781-784
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim K.H.,Gul R.,Carcelén V.,Bolotinkov A.E.,Carmarda G.S.,Yang G.,Hossain A.,Cui Y.,James R.B.,Hong J.,Kim S.U.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Systematic modelling and comparisons of capacitance and current-based microscopic defect analysis techniques for measurements of high-resistivity silicon detectors after irradiation

2. Electrical characteristics of CdTe:Pb single crystals at high temperatures

3. Characterization of deep levels in CdTe by photo-EPR and related techniques

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation and characterization of pure phase CdMnTe nanopowders by a hydrothermal route;RSC Advances;2022

2. Study of optical properties of high-resistivity CdMnTe:In single crystals before and after H2 atmosphere annealing;Materials Science and Engineering: B;2019-07

3. Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors;Journal of Crystal Growth;2018-02

4. Selective etching reveals the migration and evolution of dislocations in annealed Cd1-xZnxTe;Journal of Crystal Growth;2017-10

5. An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers;Journal of Applied Physics;2017-03-21

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