Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma-Reference-Cited by-同舟云学术

Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma

Published:2009-07 Issue:14 Volume:311 Page:3568-3572
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim Min Su,Kim Tae Hoon,Kim Do Yeob,Kim Ghun Sik,Choi Hyun Young,Cho Min Young,Jeon Su Min,Kim Jong Su,Kim Jin Soo,Lee D.Y.,Son J.S.,Lee Joo In,Kim Jin Ha,Kim Eundo,Hwang Do-Weon,Leem J.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. ZnO epitaxial layers grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO double buffer

2. Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions

3. Structural, optical and electrical properties of ZnO films grown by pulsed laser deposition (PLD)

4. Properties of ZnO thin films grown on Si substrates by MOCVD and ZnO/Si heterojunctions

5. Temperature dependent photoluminescence characteristics of nanocrystalline ZnO films grown by sol–gel technique

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