Compensation and trapping in large bandgap semiconductors: Tuning of the defect system in CdZnTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Effect of temperature- and composition-dependent deep level energies on electrical compensation: Experiment and model of theCd1−xZnxTesystem
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3. Distribution of zinc, resistivity, and photosensitivity in a vertical Bridgman grown Cd1−xZnxTe ingot
4. First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys
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3. High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies;Journal of Physics D: Applied Physics;2015-12-09
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