Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Quantum well solar cells
2. Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions
3. Photoluminescence characterization of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition
4. Study of narrow InGaP/(In)GaAs quantum wells
5. Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy
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1. Tailoring of interfaces in amorphous silicon–germanium multilayers on the atomic scale by ultra-high gravity;Philosophical Magazine Letters;2013-12
2. Optical absorptions in AlxGa1−xAs/GaAs quantum well for solar energy application;Journal of Applied Physics;2012-09
3. On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy;Thin Solid Films;2012-08
4. Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM;Journal of Crystal Growth;2012-05
5. Vertical transport through GaAs/InGaP multi-quantum-wells p-i-n diode with evidence of tunneling effects;Journal of Applied Physics;2011-11-15
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