Multi-analytical study of syntactic coalescence of polytypes in a 6H–SiC sample
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Thin films and devices of diamond, silicon carbide and gallium nitride
2. Investigation of growth processes of ingots of silicon carbide single crystals
3. XRDT Study of Structural Defects of 6H-SiC Crystals
4. Ultrahigh-quality silicon carbide single crystals
5. Growth Induced Stacking Fault Formation in 4H-SiC
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1. Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing;Crystals;2020-06-18
2. Non-destructive, multi-method, internal analysis of multiple inclusions in a single diamond: First occurrence of mackinawite (Fe,Ni)1+xS;American Mineralogist;2017-11
3. Non-Destructive In Situ Study of Plastic Deformations in Diamonds: X-ray Diffraction Topography and µFTIR Mapping of Two Super Deep Diamond Crystals from São Luiz (Juina, Brazil);Crystals;2017-07-28
4. Polytype inclusions and polytype stability in silicon-carbide crystals;Semiconductors;2016-04
5. Growth and post-growth defects in a diamond from Finsch mine (South Africa);European Journal of Mineralogy;2013-12-20
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