High quality of InAsSb epilayer with cutoff wavelength longer than 10μm grown on GaAs by the modified LPE technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Liquid-phase-epitaxy-grown InAsxSb1−x∕GaAs for room-temperature 8–12μm infrared detectors
2. InAsSb∕GaSb heterostructure based mid-wavelength-infrared detector for high temperature operation
3. Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy
4. Sb surface segregation effect on the phase separation of MBE grown InAsSb
5. The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy
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1. GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications;Current Applied Physics;2017-07
2. A buffer-free method for growth of InAsSb films on GaAs (001) substrates using MOCVD;Journal of Crystal Growth;2017-06
3. Crystal Growth and Evaluation of III-V(Sb) Materials for Mid Infrared Emitter and Detector;The Review of Laser Engineering;2017
4. Structural and electrical characteristics of n-InSb/p-GaAs heterojunction prepared by liquid phase epitaxy;Journal of Alloys and Compounds;2014-12
5. Impact of InxAlyGa1−x−yN Layer on GaSb/AlGaAs High Electron Mobility Transistor;Advanced Science Letters;2014-03-01
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