Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy-Reference-Cited by-同舟云学术

Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy

Published:2009-12 Issue:1 Volume:312 Page:52-57
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yoshida Hiroatsu,Ikejiri Keitaro,Sato Takuya,Hara Shinjiroh,Hiruma Kenji,Motohisa Junichi,Fukui Takashi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Vertical wrap-gated nanowire transistors

2. Ge/Si nanowire heterostructures as high-performance field-effect transistors

3. Vertical surround-gated silicon nanowire impact ionization field-effect transistors

4. Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy

5. Growth of nanowire superlattice structures for nanoscale photonics and electronics

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