Interface and defect structures in ZnO films on m-plane sapphire substrates-Reference-Cited by-同舟云学术

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Interface and defect structures in ZnO films on m-plane sapphire substrates

Published:2010-01 Issue:2 Volume:312 Page:238-244
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee Jae Wook,Kim Jung-Hyun,Han Seok Kyu,Hong Soon-Ku,Lee Jeong Yong,Hong Sun Ig,Yao Takafumi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Radiative recombination of electron–hole pairs spatially separated due to quantum-confined Stark and Franz–Keldish effects in ZnO/Mg0.27Zn0.73O quantum wells

2. Structural and electronic properties of ZnMgO/ZnO quantum wells

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Low temperature epitaxial growth of ZnO layer by plasma-assisted epitaxy

5. Structural and optical properties of non-polar A-plane ZnO films grown on R-plane sapphire substrates by plasma-assisted molecular-beam epitaxy

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1. Piezotronic Activity Study by AFM Tip (Al) Top Electrode of Single ZnO Nanofiber Deposited on TiN_x/c-Si Substrate;Acta Physica Polonica A;2024-08

2. NaCl flux growth of non-polar m-plane ZnO epitaxial thin film on c-plane sapphire substrate;Thin Solid Films;2024-01

3. Domain boundaries and growth manner of a-plane ZnO film on symmetric (0 0 1)LaAlO3 substrate;Journal of Crystal Growth;2024-01

4. Electric field engineering and modulation of CuBr: a potential material for optoelectronic device applications;RSC Advances;2023

5. Epitaxy of Tin Dioxide on Titanium Dioxide by Mist Chemical Vapor Deposition;Transactions of the Materials Research Society of Japan;2020-10-01

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