Structure and dielectric tunability of (Pb0.5Ba0.5)ZrO3 thin films derived on (Sr0.95La0.05)TiO3 buffer-layered substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. BaxSr1−xTiO3 thin film ferroelectric-coupled microstripline phase shifters with reduced device hysteresis;Miranda;Journal of the American Ceramic Society,2008
2. Physical properties of strained Ba0.5Sr0.5(Ti,Mn)O3 thin films buffered with La0.68Ba0.32MnO3 conductive layers;Liang;Electrochemical and Solid-State Letters,2008
3. Phase transition studies of sol–gel deposited barium zirconate titanate thin films;Dixit;Thin Solid Films,2004
4. Leakage current behavior in pulsed laser deposited Ba(Zr0.95Ti0.05)O3 thin films;Mukherijee;Journal of Applied Physics,2007
5. Tunable dielectric properties of lead barium zirconate niobate films;Kuo;Applied Physics Letters,2006
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Exciting low-field dielectric tunability in clamshell;Journal of the European Ceramic Society;2018-12
2. Superior dielectric tunability of high-valence W6+-doped Na0.5Bi0.5TiO3 thin films;Journal of Materials Science: Materials in Electronics;2016-09-12
3. Effects of annealing temperature on the microstructure, ferroelectric and dielectric properties of W-doped Na0.5Bi0.5TiO3 thin films;Ceramics International;2016-08
4. Effects of aging time of sol on the microstructure and electrical properties of (Pb0.5Ba0.5)ZrO3 thin films;Journal of Alloys and Compounds;2012-04
5. Structure and dielectric performance of K-doped (Pb0.5Ba0.5)ZrO3 thin films;Materials Research Bulletin;2011-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3