A method of promoting single crystal yield during melt growth of semiconductors by directional solidification
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Phase diagram of HgTe–ZnTe pseudobinary and density, heat capacity, and enthalpy of mixing of Hg1−xZnxTe pseudobinary melts
2. Growth of HgZnTe alloy crystals by directional solidification
3. The pseudobinary HgTe-CdTe phase diagram
4. Melt growth of high-resistivity CdZnTe crystals by controlling Cd over-pressures
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