In-situ observation of the growth of individual silicon wires in the zinc reduction reaction of SiCl4
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
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3. A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane;Bootsma;J. Cryst. Growth,1971
4. Fundamental aspects of VLS growth;Givargizov;J. Cryst. Growth,1975
5. Silicon nanowires: a review on aspects of their growth and their electrical properties;Schmidt;Adv. Mater.,2009
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1. Flow Effects on the Morphology of Silicon Materials Produced in a Gas Phase Reaction of SiCl<sub>4</sub>;International Chemical Engineering Symposia Proceedings;2022
2. Formation of boron-doped silicon wires and control of dopant concentration using zinc, SiCl4 and BCl3;Journal of Crystal Growth;2020-10
3. Experimental and numerical approaches on the effect of gas flow on the formation of tens-square-cm-scale mat of silicon nanowires from SiCl4 and zinc vapor;Journal of Crystal Growth;2019-08
4. Formation of thicker silicon wires on a sufficiently cooled substrate during the gas phase zinc reduction reaction of SiCl4;Journal of Crystal Growth;2019-01
5. Silicon for Thermoelectric Energy Harvesting Applications;Advanced Micro and Nanosystems;2017-09-22
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