Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality-Reference-Cited by-同舟云学术

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Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Published:2015-03 Issue: Volume:414 Page:105-109
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Berger C.,Dadgar A.,Bläsing J.,Lesnik A.,Veit P.,Schmidt G.,Hempel T.,Christen J.,Krost A.,Strittmatter A.

Funder

DFG

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Resonance Absorption by Nuclear Magnetic Moments in a Solid

2. Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source

3. Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot

4. Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

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1. Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates;Journal of Applied Physics;2024-07-22

2. Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors;Applied Physics Letters;2023-12-11

3. Structural and optical characterization of thin AlInN films on c-plane GaN substrates;Journal of Applied Physics;2023-08-17

4. Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping;Japanese Journal of Applied Physics;2021-12-22

5. Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers;Micromachines;2021-06-09

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