Author:
Wang H.,Wu F.,Byrappa S.,Raghothamachar B.,Dudley M.,Wu P.,Zwieback I.,Souzis A.,Ruland G.,Anderson T.
Funder
U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Cited by
5 articles.
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1. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
2. Extended Defects in SiC: Selective Etching and Raman Study;Journal of Electronic Materials;2023-02-08
3. Recent advances and challenges in silicon carbide (SiC) ceramic nanoarchitectures and their applications;Materials Today Communications;2021-09
4. Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC;Materials Science Forum;2015-06
5. A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images;Journal of Applied Physics;2014-09-14