Combined Mg/Zn p-type doping for AlGaInP laser diodes
Author:
Funder
Korean government
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. High-power, red-emitting DBR-TPL for possible 3d holographic or volumetric displays
2. Sub-MHz linewidth of 633 nm diode lasers with internal surface DBR gratings
3. 96 mW longitudinal single mode red-emitting distributed Bragg reflector ridge waveguide laser with tenth order surface gratings
4. High-power red laser diodes grown by MOVPE
5. High-Power 625-nm AlGaInP Laser Diode
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1. Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1−x)0.5In0.5P/n+-GaAs Epifilms;Molecules;2024-09-04
2. Optimization of high power AlGaInP laser diodes at 626 nm;Optical and Quantum Electronics;2024-01-27
3. Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate;Applied Physics B;2023-03
4. Composition and Interface Research on Quantum Well Intermixing Between a Tensile GaInP Quantum Well and Compressed AlGaInP Barriers;Journal of Electronic Materials;2022-06-07
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