The controlled growth of GaN microrods on Si(111) substrates by MOCVD-Reference-Cited by-同舟云学术

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The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Published:2015-03 Issue: Volume:414 Page:200-204
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Foltynski Bartosz,Garro Nuria,Vallo Martin,Finken Matthias,Giesen Christoph,Kalisch Holger,Vescan Andrei,Cantarero Andrés,Heuken Michael

Funder

European Union

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Coaxial Group III−Nitride Nanowire Photovoltaics

2. Gallium Nitride Nanowire Nanodevices

3. Dielectrophoretic assembly of GaN nanowires for UV sensor applications

4. Single gallium nitride nanowire lasers

5. GaN based nanorods for solid state lighting

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1. Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires;Journal of Crystal Growth;2021-07

2. A brief review of formation energies calculation of surfaces and edges in semiconductors;Journal of Semiconductors;2020-06-01

3. Nanowire photodetectors based on wurtzite semiconductor heterostructures;Semiconductor Science and Technology;2019-04-23

4. Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates;CrystEngComm;2019

5. Nitride Nanowires for Light Emitting Diodes;Light-Emitting Diodes;2019

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