On the potential and limits of large area seeding for photovoltaic silicon-Reference-Cited by-同舟云学术

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On the potential and limits of large area seeding for photovoltaic silicon

Published:2016-10 Issue: Volume:452 Page:272-275
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Stoddard Nathan,Gründig-Wendrock Bianca,Krause Andreas,Oriwol Daniel,Bertoni Mariana,Naerland Tine Uberg,Witting Ian,Sylla Lamine

Funder

Office of Energy Efficiency and Renewable Energy

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Growth of Silicon Crystals Free from Dislocations

2. Properties of Crystalline Silicon;Siethoff,1999

3. Emissivity of liquid silicon in visible and infrared regions

4. Total emissivity of silicon at high temperatures

5. Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetics of light and elevated temperature-induced degradation in cast mono p-type silicon;Solar Energy;2021-08

2. Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone method;Journal of Crystal Growth;2020-12

3. Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies;Solar RRL;2020-02-25

4. Mono-like cast method;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020

5. Silicon single crystals;Single Crystals of Electronic Materials;2019

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