Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides-Reference-Cited by-同舟云学术

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Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Published:2016-08 Issue: Volume:447 Page:5-12
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ahmed Adam S.,Wen Hua,Ohta Taisuke,Pinchuk Igor V.,Zhu Tiancong,Beechem Thomas,Kawakami Roland K.

Funder

ONR

C-SPIN STARnet

Semiconductor Research Corporation

MARCO

DARPA

ENCOMM

NRI-NSF

LDRD program at Sandia National Laboratories (SNL)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Emergent phenomena at oxide interfaces

2. Electric field effect in correlated oxide systems

3. Oxide Interfaces—An Opportunity for Electronics

4. Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxialLa0.67Sr0.33MnO3tunnel junctions

5. Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments

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1. Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences;Frontiers in Physics;2022-11-30

2. Conduction mechanisms in epitaxial NiO/Graphene gas sensors;Sensors and Actuators B: Chemical;2020-12

3. Large scale epitaxial graphite grown on twin free nickel(111)/spinel substrate;CrystEngComm;2020

4. Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives;2D Materials;2018-06-01

5. Strontium Oxide Tunnel Barriers for High Quality Spin Transport and Large Spin Accumulation in Graphene;Nano Letters;2017-11-16

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