Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing-Reference-Cited by-同舟云学术

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Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing

Published:2017-01 Issue: Volume:457 Page:343-348
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jia Ningbo,Xu Yadong,Guo Rongrong,Gu Yaxu,Fu Xu,Wang Yuhan,Jie Wanqi

Funder

National Natural Science Foundations of China

National “973” Program

Natural Science Basic Research Plan in Shaanxi Province of China

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. HgCdTe infrared detector material: history, status and outlook;Rogalski;Rep. Prog. Phys.,2005

2. HgCdTe infrared detectors;Norton;Opto-Electron. Rev.,2002

3. Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors;Bolotnikov;J. Cryst. Growth,2013

4. Etch pit study of dislocation formation in Hg1−xCdxTe during array hybridization and its effect on device performance;Norton;J. Vac. Sci. Technol. A,1989

5. Dislocations in Hg1−xCdxTe/Cd1−zZnzTe epilayers grown by liquid-phase epitaxy;Yoshikawa;J. Appl. Phys.,1988

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1. Impact of fast-solidification on all-d-metal NiCoMnTi based giant magnetocaloric Heusler compounds;Acta Materialia;2024-02

2. Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound;Vacuum;2023-11

3. Effects of annealing in Te2 atmosphere on photoelectric properties and carrier transport properties of CdZnTe films;Materials Science in Semiconductor Processing;2023-01

4. Types and origin of surface defects induced by post-growth annealing of CdZnTe and CdMnTe crystals;Vacuum;2022-12

5. Improvement of charge collection efficiency of the CdZnTe detectors by decreasing the Te inclusions;Materials Research Express;2022-10-01

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