Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots-Reference-Cited by-同舟云学术

Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots

Published:2017-02 Issue: Volume:459 Page:67-75
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Trempa M.,Kupka I.,Kranert C.,Lehmann T.,Reimann C.,Friedrich J.

Funder

German Federal Ministry for Economic Affairs and Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Grain control in directional solidification of photovoltaic silicon

2. Development of high-performance multicrystalline silicon for photovoltaic industry

3. Influence of different seed materials on multi-crystalline silicon ingot properties

4. Development of grain structures of multi-crystalline silicon from randomly orientated seeds in directional solidification

5. Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification

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4. Dynamic observation of dislocation evolution and interaction with twin boundaries in silicon crystal growth using in – situ synchrotron X-ray diffraction imaging;Acta Materialia;2021-05

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