Large-area MoS 2 deposition via MOVPE-Reference-Cited by-同舟云学术

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Large-area MoS 2 deposition via MOVPE

Published:2017-04 Issue: Volume:464 Page:100-104
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Marx M.,Nordmann S.,Knoch J.,Franzen C.,Stampfer C.,Andrzejewski D.,Kümmell T.,Bacher G.,Heuken M.,Kalisch H.,Vescan A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Electronic properties of transition-metal dichalcogenides;Kuc;MRS Bull.,2015

2. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties;Wilson;Adv. Phys.,1969

3. Synthesis and structure of two-dimensional transition-metal dichalcogenides;Shi;MRS Bull.,2015

4. Two-dimensional layered transition-metal dichalcogenides for versatile properties and applications;Vogel;MRS Bull.,2015

5. Single-layer MoS2 transistors;Radisavljevic;Nat. Nanotechnol.,2011

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1. Bismuth tri-iodide – Graphene 2D material;Journal of Crystal Growth;2024-08

2. Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition;Journal of Vacuum Science & Technology A;2024-02-02

3. Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC;Crystals;2023-10-10

4. Two-dimensional layered metal dichalcogenides-based heterostructures for solar cells applications: A review;Solar Energy;2023-10

5. Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications;Advanced Electronic Materials;2023-06-28

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