Author:
Li Qiang,Jiang Huaxing,Lau Kei May
Funder
Research Grants Council, University Grants Committee
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. H. Kataria, W. Metaferia, C. Junesand, C. Zhang, N. Julian, J.E. Bowers, S. Lourdudoss, Simple epitaxial lateral overgrowth process as a strategy for photonic integration on silicon, IEEE J. Sel. Top. Quantum Electron. 20(4), 380-386.
2. Room-temperature InP distributed feedback laser array directly grown on silicon;Wang;Nat. Photonics,2015
3. More than Moore: III-V devices and Si CMOS get it together;Kazior;IEDM Tech. Dig.,2013
4. High quality Ge on Si by epitaxial necking;Langdo;Appl. Phys. Lett.,2000
5. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping;Li;Appl. Phys. Lett.,2007
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献