A new system for sodium flux growth of bulk GaN. Part I: System development-Reference-Cited by-同舟云学术

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A new system for sodium flux growth of bulk GaN. Part I: System development

Published:2016-12 Issue: Volume:456 Page:58-66
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Von Dollen Paul,Pimputkar Siddha,Alreesh Mohammed Abo,Albrithen Hamad,Suihkonen Sami,Nakamura Shuji,Speck James S.

Funder

NSF

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference45 articles.

1. GaN-based RF power devices and amplifiers;Mishra;Proc. IEEE,2008

2. Congruent melting of gallium nitride at 6GPa and its application to single-crystal growth;Utsumi;Nat. Mater.,2003

3. The challenge of decomposition and melting of gallium nitride under high pressure and high temperature;Porowski;J. Phys. Chem. Solids,2015

4. Bulk GaN crystals grown by HVPE;Fujito;J. Cryst. Growth,2009

5. Improved growth rates and purity of basic ammonothermal GaN;Pimputkar;J. Cryst. Growth,2014

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1. Monitoring of GaN crystal growth rate in the Na flux growth via electroresistometry of Ga-Na solution;Journal of Crystal Growth;2023-09

2. Prospective view of nitride material synthesis;International Journal of Ceramic Engineering & Science;2023-07-27

3. Numerical Simulation of Temperature Field Optimization to Enhance Nitrogen Transfer in GaN Crystal Growth by the Na-Flux Method;ACS Omega;2023-06-22

4. Progress of Na-Flux Method for Large-Size GaN Single Crystal Growth;Journal of Electronic Materials;2022-09-16

5. Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt;Crystals;2021-09-02

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