Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×106cm2/V s in AlGaAs/GaAs quantum wells grown by MBE-Reference-Cited by-同舟云学术

Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×106cm2/V s in AlGaAs/GaAs quantum wells grown by MBE

Published:2016-05 Issue: Volume:441 Page:71-77
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gardner Geoffrey C.,Fallahi Saeed,Watson John D.,Manfra Michael J.

Funder

W.M. Keck Foundation

U.S DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering

Office of Naval Research, ONR

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference40 articles.

1. Two-Dimensional Magnetotransport in the Extreme Quantum Limit

2. Direct observation of a fractional charge

3. Quasi-Particle Properties from Tunneling in the v = 5/2 Fractional Quantum Hall State

4. Fabry-Perot Interferometry with Fractional Charges

5. Measurement of filling factor 5/2 quasiparticle interference with observation of charge e/4 and e/2 period oscillations

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas;Quantum Frontiers;2024-07-26

2. Effect of non-square potential profile on three subband electron mobility in AlGaAs quantum well structures;Physica Scripta;2024-06-28

3. Epitaxy;Encyclopedia of Condensed Matter Physics;2024

4. Effect of parabolic structure potentials on electron mobility in AlxGa1-xAs quantum well based field effect transistor structure;Micro and Nanostructures;2023-12

5. Overview of the process technology for the preparation of ultrahigh purity indium required for the fabrication of indium phosphide related epitaxial structures based devices needed for advanced electronic applications;Journal of Laser Applications;2023-09-01