Effect of ramping on oxygen precipitates and Cu–vacancy complex in Czochralski silicon-Reference-Cited by-同舟云学术

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Effect of ramping on oxygen precipitates and Cu–vacancy complex in Czochralski silicon

Published:2016-07 Issue: Volume:445 Page:53-57
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Xu Jin,Lv Yaochao,Guo Weibin,Xie Tingting

Funder

National Natural Science Foundation of China

Opening Project of State Key Laboratory of Silicon Materials

State Scholarship Fund of China, China Scholarship Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Oxygen precipitation in silicon

2. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

3. Gap states caused by oxygen precipitation in Czochralski silicon crystals

4. Investigation of oxygen distribution in electromagnetic CZ–Si melts with a transverse magnetic field using 3D global modeling

5. Gettering mechanisms in silicon

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