Controlling interfacial disorder and strain of W-structured type-II superlattices using As2 flux
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Type‐II quantum‐well lasers for the mid‐wavelength infrared
2. Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family
3. W-structured type-II superlattice-based long- and very long wavelength infrared photodiodes
4. Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures
5. High quantum efficiency long-wave infrared photodiodes using W- structured type-II superlattices
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1. Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices;ACS Applied Materials & Interfaces;2023-02-01
2. Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy;Journal of Crystal Growth;2014-01
3. Type-II Superlattice Infrared Detectors;Advances in Infrared Photodetectors;2011
4. Evaluation of the In concentration of an InxGa1−xSb alloy layer in cross-sectional HRTEM images of III–V semiconductor superlattices;Journal of Physics D: Applied Physics;2010-07-29
5. MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones;Journal of Crystal Growth;2009-03
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