Inclusions in LEC-grown Si GaAs single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Silicon—Evolution and Future of a Technology;Jurisch,2004
2. LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues
3. A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors
4. Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs
5. Dislocations and precipitates in gallium arsenide
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1. Influence of Si Doping on Dislocations and Mechanical Properties of GaAs Crystals Grown by Modified Vertical Bridgman Method;Crystal Research and Technology;2022-03-28
2. Interplay mechanism between secondary phase particles and extended dislocations in CdZnTe crystals;CrystEngComm;2015
3. Mechanical Property Evaluation of GaAs Crystal for Solar Cells;Chinese Physics Letters;2011-08
4. Defects of GaAs Crystals Grown by the Pulling-Down Method;Advanced Materials Research;2010-12
5. Growth of Undoped GaAs Single Crystal by Pulling-Down Method;Materials Science Forum;2010-11
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