Effect of growth temperature on Eu incorporation in GaN powders-Reference-Cited by-同舟云学术

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Effect of growth temperature on Eu incorporation in GaN powders

Published:2008-01 Issue:2 Volume:310 Page:452-456
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shi Junxia,Chandrashekhar M.V.S.,Reiherzer Jesse,Schaff William J.,Lu Jie,Disalvo Francis J.,Spencer Michael G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

2. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

3. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3:Eu3+ Luminescent Powders

4. Preparation and optical spectroscopy of Eu3+-doped GaN luminescent semiconductor from freeze-dried precursors

5. Synthesis and impurity doping of GaN powders by the two-stage vapor-phase method for phosphor applications

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Annealing effect on the structural and optical behavior of ZnO:Eu3+ thin film grown using RF magnetron sputtering technique and application to dye sensitized solar cells;Scientific Reports;2020-05-22

2. Thermodynamic description of the Eu–Ga system using substitutional solution and associate models;International Journal of Materials Research;2020-03-11

3. Growth Temperature Dependence of Morphology of GaN Single Crystals in the Na-Li-Ca Flux Method;Journal of Electronic Materials;2017-11-30

4. Intrinsic blue-white luminescence, luminescence color tunability, synthesis, structure, and polymorphism of K3YSi2O7;CrystEngComm;2016

5. Effect of Annealing on the Structure and Photoluminescence of Eu-Doped ZnO Nanorod Ordered Array Thin Films;Journal of Nanomaterials;2012

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