Growth temperature and N2 ambient pressure-dependent crystalline orientations and band gaps of pulsed laser-deposited AlN/(0001) sapphire thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Optical and structural properties of highly c-axis oriented aluminum nitride prepared by sputter-deposition in pure nitrogen
2. GaN: Processing, defects, and devices
3. High temperature strain gages based on reactively sputtered AlNx thin films
4. Low temperature growth of r.f. reactively planar magnetron-sputtered AlN films
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Controlled Growth of Conductive AlN Thin Films by Plasma-Assisted Reactive Evaporation;Metallurgical and Materials Transactions A;2017-04-27
2. Structural ordering, morphology and optical properties of amorphous Al In1−N thin films grown by plasma-assisted dual source reactive evaporation;Journal of Alloys and Compounds;2015-05
3. Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering;Journal of Alloys and Compounds;2009-02
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