Comparative analysis of thermal stress induced dislocations in 7 kg, 40 kg and 330 kg multi-crystalline silicon ingots grown by directional solidification-Reference-Cited by-同舟云学术

Comparative analysis of thermal stress induced dislocations in 7 kg, 40 kg and 330 kg multi-crystalline silicon ingots grown by directional solidification

Published:2020-11 Issue: Volume:550 Page:125901
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Avinash Kumar M.,Aravindan G.,Srinivasan M.,Ramasamy P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

2. System design and hot zone optimization of monocrystalline silicon directional solidification furnace for PV application

3. Multicrystalline silicon crystal assisted by silicon flakes as seeds

4. Pulsed-laser-deposited lead sulfide nanoparticles based decoration of porous silicon layer as an effective passivation treatment for multicrystalline silicon

5. Thermal stress induced dislocation distribution in directional solidification of Si for PV application

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