The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures-Reference-Cited by-同舟云学术

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The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures

Published:2020-04 Issue: Volume:535 Page:125570
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Tiantian,Thomas Candice,Diaz Rosa E.,Gronin Sergei,Passarello Donata,Gardner Geoffrey C.,Capano Michael A.,Manfra Michael J.

Funder

Microsoft

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Majorana fermions and a topological phase transition in semiconductor-superconductor heterostructures;Lutchyn;Phys. Rev. Lett.,2010

2. Helical liquids and Majorana bound states in quantum wires;Oreg;Phys. Rev. Lett.,2010

3. Generic New Platform for topological quantum computation using semiconductor heterostructures;Sau;Phys. Rev. Lett.,2010

4. Majorana fermions in a tunable semiconductor device;Alicea;Phys. Rev. B,2010

5. Majorana zero modes in superconductor-semiconductor heterostructures;Lutchyn;Nat. Rev. Mater.,2018

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems;Physical Review Materials;2023-07-26

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