Study of magnetoconductance effect in silicon nanowires formed by chemical etching in HF/AgNO 3 solution: Effect of etching time
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor
2. Silicon Vertically Integrated Nanowire Field Effect Transistors
3. Alternating the Output of a CdS Nanowire Nanogenerator by a White-Light-Stimulated Optoelectronic Effect
4. Coaxial silicon nanowires as solar cells and nanoelectronic power sources
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Structural and thermoelectric properties of MoSe2/CNT nanocomposites;Journal of Physics and Chemistry of Solids;2024-01
2. Effect of Etching Duration on the Morphological and Opto-Electrical Properties of Silicon Nanowires Obtained by Ag-Assisted Chemical Etching;Silicon;2020-02-13
3. Effect of Etching Time to Tune Magnetoresistance Between Positive and Negative Values in p-Type Silicon Nanowires;Journal of Electronic Materials;2019-09-11
4. Effect of porosity on the enhancement of relative magnetoconductance in porous Si nanostructures: a comparative study with Si nanowires;Applied Physics A;2017-06-29
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