Improvement in surface morphology of GaSb buffer layer by two-step high and low temperature growth-Reference-Cited by-同舟云学术

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Improvement in surface morphology of GaSb buffer layer by two-step high and low temperature growth

Published:2017-11 Issue: Volume:477 Page:243-248
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Okumura Shigekazu,Tomabechi Shuichi,Suzuki Ryo,Matsukura Yusuke,Tsunoda Koji,Kon Jun-ichi,Nishino Hironori

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. High power mid-infrared interband cascade lasers based on type-II quantum wells

2. Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices

3. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review

4. Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates

5. Atomic antimony for molecular beam epitaxy of high quality III–V semiconductor alloys

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers;Journal of Crystal Growth;2024-04

2. Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures;Journal of Vacuum Science & Technology A;2024-04-01

3. Optimized Ingaas Growth on Gap/Si(100) Templates with Different Low-Temperature Layers;2024

4. Effects of As2 pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy;Japanese Journal of Applied Physics;2018-10-01

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