Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications
2. Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism
3. Fabrication and Characterization of 3C-SiC-Based MOSFETs
4. Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C–SiC for MEMS Application
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1. Application of Methyl Trichlorosilane in SiC Growth;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps;Crystals;2023-07-19
3. Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC;Crystal Research and Technology;2023-05-17
4. Review of Sublimation Growth of SiC Bulk Crystals;Materials Science Forum;2022-05-31
5. In situ bow reduction during sublimation growth of cubic silicon carbide;REVIEWS ON ADVANCED MATERIALS SCIENCE;2022-01-01
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