Investigation of point defects and electrical properties of the In-doped CdMnTe grown by traveling heater method-Reference-Cited by-同舟云学术

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Investigation of point defects and electrical properties of the In-doped CdMnTe grown by traveling heater method

Published:2017-04 Issue: Volume:463 Page:79-85
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wen Xuliang,Zhang Jijun,Mao Yifei,Min Jiahua,Liang Xiaoyan,Huang Jian,Tang Ke,Wang Linjun

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Gamma-ray response of semi-insulating CdMnTe crystals;Kim;IEEE Trans. Nucl. Sci.,2009

2. Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy;Zhang;J. Cryst. Growth,2008

3. Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector;Du;J. Cryst. Growth,2011

4. Is the (Cd, Mn) Te crystal a prospective material for X-ray and γ-ray detectors?;Mycielski;Phys. Status Solidi (c),2005

5. Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors;Burger;J. Cryst. Growth,1999

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1. Growth and characterization of large-size CdMgTe single crystals doped with different in amounts;Vacuum;2024-02

2. CHANGES IN THE ELECTROPHYSICAL AND DETECTOR PROPERTIES OF THE PROMISING DETECTOR MATERIAL Cd1-xMnxTe DEPENDING ON THE CONCENTRATION OF IMPURITIES, DEFECTS AND MANGANESE CONTENT;Problems of Atomic Science and Technology;2024-01-29

3. Research Progress on Postgrowth Annealing of Cd ₁₋ _x Mn _x Te Crystals;Crystal Research and Technology;2022-02-20

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