Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications
2. Evaluation of elemental and compound semiconductors for X-ray digital radiography
3. Growth and characterization of CdTe single crystals for radiation detectors
4. Current Issues of High-Pressure Bridgman Growth of Semi-Insulating CdZnTe
5. Control of crystal orientation of CdTe epitaxial layers grown on (001) GaAs with ZnSe buffer layer by molecular beam epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dependence of surface morphology at initial growth of CdTe on the II/VI on (2 1 1) Si substrates by vapor phase epitaxy using metallic Cd source;Journal of Crystal Growth;2019-01
2. Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source;Journal of Electronic Materials;2018-10-16
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