Growth direction control of InAs nanowires on (0 0 1) Si substrate with SiO 2 /Si nano-trench-Reference-Cited by-同舟云学术

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Growth direction control of InAs nanowires on (0 0 1) Si substrate with SiO 2 /Si nano-trench

Published:2017-04 Issue: Volume:463 Page:27-32
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Wei-Chieh,Chen Li-Hsing,Lin Yen-Ting,Lin Hao-Hsiung

Funder

Ministry of Science and Technology, ROC

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Phase perfection in Zinc Blende and Wurtzite III-V nanowires using basic growth parameters;Joyce;Nano Lett.,2010

2. InAs nanowires on Si substrates grown by solid source molecular beam epitaxy;Ihn;Nanotechnology,2007

3. Growth kinetic in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area and molecular beam epitaxy;Hertenberger;J. Appl. Phys.,2010

4. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy;Koblmüller;Nanotechnology,2010

5. Role of Surface diffusion in chemical beam epitaxy of InAs nanowires;Jensen;Nano Lett.,2004

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