On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Terracing in HgCdTe LPE films grown from Te solution
2. Development of depressions and voids during LPE growth of GaAs
3. Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inch
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5. Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere
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1. Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades;Crystal Research and Technology;2019-09-30
2. Liquid Phase Epitaxy of Gallium Nitride;Crystal Growth & Design;2019-09-17
3. Epitaxial Crystal Growth: Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2017
4. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
5. Growth of Bulk GaN Crystals;Comprehensive Semiconductor Science and Technology;2011
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